[14a-B13-1~10] 13.5 Semiconductor devices and related technologies

[14a-B13-4] Distribution of the energy levels of single interface-traps: Is it really "U-shaped"?

〇Toshiaki Tsuchiya¹, Patrick M. Lenahan² (1.Shimane Univ., 2.Pennsylvania State Univ.)

Keywords:semiconductor, interface traps, charge pumping method

The density of states (DOS) of single MOS interface traps has been obtained by the charge pumping (CP) method, which is fairly similar to the P_b0 density of states and does not show a “U-shape” distribution. In this study, using the CP method, we evaluated the changes in DOS of interface traps in MOSFETs before and after hot carrier stress, and discussed them.