[13p-B13-1~12] 13.5 Semiconductor devices and related technologies

[13p-B13-4] Negative Capacitance as a Performance Booster for Tunnel FET

〇Masaharu Kobayashi¹, Kyungmin Jang¹, Nozomu Ueyama¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

Keywords:negative capacitance, tunnel FET, energy efficiency

Tunnel FET and Negative capacitance FET have been independently studied so far, however, there is an opportunity to combine these two devices and obtain super steep subthreshold slope. In this work, we propose a hybrid device architecture, Negative capacitance tunnel FET, where band-to-band tunneling is enhanced by channel potential amplification by negative capacitance. We build simulation method, design NCTFET and then benchmark its energy efficiency.