The 77th JSAP Autumn Meeting, 2016

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Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[13p-B13-1~12] 13.5 Semiconductor devices and related technologies

Tue. Sep 13, 2016 1:45 PM - 5:00 PM B13 (Exhibition Hall)

Toshiaki Tsuchiya(Shimane Univ.), Yukinori Ono(Shizuoka Univ.)

2:15 PM - 2:30 PM

[13p-B13-3] Change in electrical characteristics of InGaAs tunnel FETs by gate current stress

〇SANghee YOON1,2, CHIH-YU CHANG1,2, DAEHWAN AHN1,2, TAKENAKA MITSURU1,2, SHINICHI TAKAGI1,2 (1.Tokyo University, 2.JST CREST)

Keywords:Tunnel FET, Constant Current stress, InGaAs