[13p-B13-1~12] 13.5 Semiconductor devices and related technologies

△ [13p-B13-7] Impacts of energy relaxation rates on quasi-ballistic hole transport capability in Ge and Si nanowires

〇Hajime Tanaka¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:nanowire, quasi-ballistic, germanium

We analyzed the quasi-ballsitic hole transport properties in Ge and Si nanowires by solving Boltzmann transport equation based on atomistic models. We found that the quasi-ballistic hole transport capability of a Ge nanowire was not as high as expected from mobility or injection velocity, and was similar to that of a Si nanowire. This was understood from the slower energy relaxation in Ge nanowires than in Si nanowires, which results in the longer length where backscattered holes can return to the source.