2:15 PM - 2:45 PM
[13p-B8-2] Point Defect Control during Si Crystal Growth
Keywords:Silicon, point defect, grown-in defect-free crystal
Along with a remarkable progress of semiconductor devices for half a century so far, a lot of significant improvements have been continued in a field of Si crystal growth technology which is the base material supporting for the progress of semiconductor devices. From 2000 onward, a mass production of 300mm grown-in defect-free Si crystals came to be achieved by a precise control of point defects during crystal growth. In this report, I will look back on the process of the development of such the grown-in defect-free Si crystals and comment on some future problems.