The 77th JSAP Autumn Meeting, 2016

Presentation information

Symposium (Oral)

Symposium » Recent topics of point defects in semicondoctor crystals

[13p-B8-1~10] Recent topics of point defects in semicondoctor crystals

Tue. Sep 13, 2016 1:45 PM - 6:00 PM B8 (Exhibition Hall)

Toshiaki Ono(SUMCO), Kentaro Kutsukake(Tohoku Univ.)

2:15 PM - 2:45 PM

[13p-B8-2] Point Defect Control during Si Crystal Growth

Masataka Hourai1 (1.SUMCO)

Keywords:Silicon, point defect, grown-in defect-free crystal

Along with a remarkable progress of semiconductor devices for half a century so far, a lot of significant improvements have been continued in a field of Si crystal growth technology which is the base material supporting for the progress of semiconductor devices. From 2000 onward, a mass production of 300mm grown-in defect-free Si crystals came to be achieved by a precise control of point defects during crystal growth. In this report, I will look back on the process of the development of such the grown-in defect-free Si crystals and comment on some future problems.