[13p-B8-1~10] Recent topics of point defects in semicondoctor crystals

[13p-B8-8] Point Defects in SiC from a Perspective of Power Device Application

〇Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

Keywords:SiC, point defect, carrier lifetime

SiC is a promising semiconductor for power device applications. In recent years, a carrier-llifetime killer in SiC has been identified, and the control of the defect density and carrier lifetime has been achieved. In this paper, current understanding of major point defects in SiC is reviewed.