1:30 PM - 3:30 PM
[13p-P5-53] Growth and characterization of atomic layered NbSe2 by MBE method
Keywords:Atomic layers
The recent studies on two-dimensional (2D) metals, in particular metallic transition metal dichalcogenides (TMDs), have shown that 2D metals are essentially different from bulk metals, leading to discoveries of interesting phenomena arising from the low dimensionality. For example, interesting collective electronic properties, including emergence of the Bose metal phase, enhanced charge-density-wave (CDW) order, the coexistence of CDW order and superconductivity, Ising pairing protected by spin-momentum locking in superconductivity, have been demonstrated in 2D metallic TMDs.
The bottleneck in the research on 2D metals is difficulty in preparation of samples. Although the mechanical exfoliation, a top down technique, has been successfully applied to prepare 2D semiconductors (semiconducting TMDs and black phosphorus, for example), the strong inter-layer interaction arising from the metallic bond have made application of the top-down method to metallic layers difficult. Even though a few papers report exfoliation-based preparation of 2D metals, a different approach, a bottom-up method, is a prerequisite to prompt exploration of the full potential of rich physics in 2D metals.
Here, we have focused on the MBE growth of mono- and few-layered NbSe2 with hexagonal boron nitride (hBN) as substrates. 2H-NbSe2 is a layered metallic TMD, where Nb atoms are sandwiched by two layers of selenide atoms with trigonal prismatic coordination geometry. In this presentation, we will discuss the details of MBE growth and characterization using reflectance spectroscopy and electronic transport measurements.
The bottleneck in the research on 2D metals is difficulty in preparation of samples. Although the mechanical exfoliation, a top down technique, has been successfully applied to prepare 2D semiconductors (semiconducting TMDs and black phosphorus, for example), the strong inter-layer interaction arising from the metallic bond have made application of the top-down method to metallic layers difficult. Even though a few papers report exfoliation-based preparation of 2D metals, a different approach, a bottom-up method, is a prerequisite to prompt exploration of the full potential of rich physics in 2D metals.
Here, we have focused on the MBE growth of mono- and few-layered NbSe2 with hexagonal boron nitride (hBN) as substrates. 2H-NbSe2 is a layered metallic TMD, where Nb atoms are sandwiched by two layers of selenide atoms with trigonal prismatic coordination geometry. In this presentation, we will discuss the details of MBE growth and characterization using reflectance spectroscopy and electronic transport measurements.