[13p-P7-1~17] 6.4 Thin films and New materials

[13p-P7-6] Electric properties of non-polar ZnO film grown on r-plane sapphire substrate by catalytic reaction assisted chemical vapor deposition

〇Ryouich Tajima¹, Munenori Ikeda¹, Shingo Kanaouchi¹, Koihiro Oishi², Hironori Katagiri², Yasuhiro Tamayama¹, Kanji Yasui¹ (1.Nagaoka Univ. Technol, 2.Nat. Inst. Technol)

Keywords:catalytic reaction, non-polar ZnO

Non-polar ZnO films were grown on r-plane sapphire substrates through a reaction between dimethylzinc and high-temperature H₂O produced by a Pt-catalyzed H₂ and O₂ reaction. The deposition temperature was set at 500 ^oC, 600 ^oC, 650 ^oC and 700 ^oC. Obtained ZnO films were evaluated by atomic force microscope, x-ray diffraction, and Hall-effect measurement. As a result of the experiment, the ZnO films on r-plane sapphire substrates showed anisotropic surface morphology with nanostripe arrays and exhibited intense (11-20) peak associated with the ZnO (11-20) index plane at 2q=56.64^o. Electronic conductivities parallel and perpendicular to c-axis of the ZnO films were different and, therefore, the anisotropic electron transport was confirmed.