[14a-A21-1~11] 15.4 III-V-group nitride crystals

[14a-A21-10] Binding energy of biexcitons in AlGaN-based quantum wells
- Dependence on alloy composition in ternary barrier layers (2) -

Taira Izumi¹, Shumpei Fukuchi¹, Nobuto Imura¹, Satoshi Kurai¹, Hideaki Murotani², Hideto Miyake³, Kazumasa Hiramatsu³, 〇Yoichi Yamada¹ (1.Yamaguchi Univ., 2.Tokuyama College, 3.Mie Univ.)

Keywords:biexciton, quantum well, AlGaN