[14a-A22-1~2] 8.10 Plasma Electronics Award Ceremony

[14a-A22-1] [Plasma Electronics Award Speech] Synthesis and Characterization of ZnInON Semiconductor: a ZnO-based Compound with Tunable Band Gap

〇Naho Itagaki¹, Koichi Matsushima¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

Keywords:sputtering, ZnO

We have synthesized ZnInON (ZION) semiconductor, a new ZnO-based compound with tuneable band gap, by radio-frequency magnetron sputtering on quartz glass, a-SiO₂/Si, and GaN/Al₂O₃ templates. From XRD analysis using wide-range reciprocal-space mapping, ZION is deduced to be a pseudo-binary system of wurtzite ZnO and wurtzite InN, the c-axis lattice parameter of which varies continuously from 0.53 to 0.58 nm with decreasing the chemical composition ratio [Zn]/([Zn]+[In]). From optical measurements, we found that ZION has tuneability of the band gap over the entire visible spectrum, and the photo-to-dark conductivity ratio is high of 2.2×10³, demonstrating the high photosensitivity of ZION films. We have also succeeded in the epitaxial growth of ZION films with the composition ratio (InN)/(ZnO) of about 50 at.% by using GaN templates, where the FWHM of the ZION (002) rocking curve is small of 350 arcsec. These results allow us to conclude that ZION will open up the field of group II-III-V-VI semiconductors that offer new opportunities for design of optoelectronic devices.