The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

8 Plasma Electronics » 8.9 Plasma Electronics Invited Talk

[14a-A22-3~3] 8.9 Plasma Electronics Invited Talk

Wed. Sep 14, 2016 11:00 AM - 11:30 AM A22 (Main Hall B)

Fumiyoshi Tochikubo(Tokyo Metropolitan Univ.)

11:00 AM - 11:30 AM

[14a-A22-3] [INVITED] Plasma Processes for New Materials and Devices

Keizo Kinoshita1 (1.PETRA)

Keywords:plasma process, integrated circuit device, new material

Plasma processes, such as etching and CVD, have been evolving as a key technology in fabricating integrated circuit devices. Some of newly proposed devices were originaly fabricated by assembling some individual discrete components without using plasma processes. Due to progression of the device size scaling, elimination of process-induced-damage is getting important in the plasma processes recently. In this presentation, these issues and important points of new plasma process developments for innovative devices will be discussed by referring new materials' introduciton such as Low-k and magnetic multilayered films into the LSI devices along with fabrication of silicon photonics device which has MEMS order dimension.