The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.10 Compound solar cells

[14a-A34-1~7] 13.10 Compound solar cells

Wed. Sep 14, 2016 9:45 AM - 11:30 AM A34 (301B)

Kunihko Tanaka(Nagaoka Univ. of Tech.)

11:00 AM - 11:15 AM

[14a-A34-6] Defect Formation Energy in the Perovskite Semiconductor CsSnI3

Tatsuya Nakase1, Shinya Hikari2, Akira Masago1,2, Tetsuya Fukushima3, Kazunori Sato4, Hiroshi Katayama-Yoshida1,2 (1.Osaka Univ., 2.CSRN, Osaka Univ., 3.INSD, Osaka Univ., 4.Eng., Osaka Univ.)

Keywords:New Type Solar Cells

The perovskite semiconductor CH3NH3PbI3 has attracted much attention as a material of inexpensive and high-efficient next-generation solar cells, but another material is requested because the material involves a fragile component part of CH3NH3 and a toxic element of Pb. CsSnI3 is a strong candidate. The energy conversion efficiency is 10.2% in 2012. Toward lower cost and higher efficiency, we investigate defects in this system using the first principles calculations. Finally we design strong materials of the low-cost and high-efficiency solar cells.