[14a-B11-1~7] 12.4 Organic light-emitting devices and organic transistors

[14a-B11-4] Observation of Trap Formation Process in Pentacene Field-Effect Transistors by Three-Terminal Capacitance-Voltage Measurement

〇Yuya Tanaka¹, Kohei Yamamoto², Yutaka Noguchi³, Hisao Ishii^1,2,4 (1.CFS, Chiba Univ., 2.AIS, Chiba Univ., 3.DEB, Meiji Univ., 4.MCRC, Chiba Univ.)

Keywords:organic field-effect transistor, capacitance-voltage measurement, degradation

We applied a three-terminal capacitance voltage measurement (TT-CV) which enables us to observe carrier behaviors of organic field effect transistors (OFETs) during operation. In TT-CV curves, trap formation under the source and drain electrode were clearly obserbed when OFETs were degradated by applying constant bias. By the insertion of buffer layer, we found that traps under the drain electode were suppressed.