[14a-B13-1~10] 13.5 Semiconductor devices and related technologies

[14a-B13-10] Development of Radiation Tolerant Si-MOSFET Ⅱ

〇Shutetsu Akiyama¹, Masashi Otsuka¹, Jun Aizawa¹, Kunihisa Ishii¹, Katsumi Yoshizawa¹, Tomonari Nakada², Atsushi Watanabe², Kohichi Mochiki³ (1.Pioneer MTC, 2.Pioneer, 3.Tokyo City Univ.)

Keywords:semiconductor, radiation tolerant, High-efficiency Electron Emission Device

HEED (High-efficiency Electron Emission Device) is an unique fiield emitter array, and it is expected to be applied to ultrahigh-sensitivity image sensor by using of HARP(High-gain Avalanche Rushing amorphous Photoconductor) as a photoconductive films.It is known that active-matrix circuits of HEED which consists of Si-MOSFETs were damaged in the environment of gamma ray irradiation.In this article, we applied a ring type gate structure to Si-MOSFET, in the result, we confirmed that the radiation hardness of Si-MOSFET was improved in the environment of gamma ray irradiation.