The 77th JSAP Autumn Meeting, 2016

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Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

Wed. Sep 14, 2016 9:30 AM - 11:30 AM P6 (Exhibition Hall)

9:30 AM - 11:30 AM

[14a-P6-11] C-V profile analysis of plasma-induced defects in GaN

〇Yusaku Wakasugi1, Seiji Nakamura1, Tsugunori Okumura1 (1.Tokyo Metro. Univ.)

Keywords:plasma-induced defect, GaN