[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

[14a-P6-10] Correlation between the Ev+0.86eV hole trap and the yellow luminescence in MOCVD n-GaN

〇(M2)Shougo Ueda¹, Yutaka Tokuda¹ (1.Aichi Inst. of Tecnol.)

Keywords:GaN, photoluminescence

We have studied the correlation between the E_v+0.86 eV hole trap (H1) and the yellow luminescence (YL) in MOCVD n-GaN. We have already reported that H1 trap is the dominant trap and is associated with V_Ga-related defects or carbon-related defects. Moreover, both V_Ga-related defects and carbon-related defects have been reported to be responsible for YL. The H1 trap concentration was obtained from MCTS measurements using the 355 nm LED for n-GaN Schottky diodes on GaN substrate. PL measurements using the 325 nm He-Cd laser were performed close to Schottky diodes. It is found that the BE-normalized YL intensity close to the diode with the H1 concentration of 1.5x10¹⁶ cm^-3 is a factor of three higher than that with the H1 concentration of 5.2x10¹⁵ cm^-3. PL measurements are now being performed close to many diodes in order to confirm the correlation between H1 trap concentrations and YL intensities.