[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

[14a-P6-9] Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and characterization of gate leakage characteristics

〇Junji Kotani¹, Atsushi Yamada¹, Tetsuro Ishiguro¹, Norikazu Nakamura¹ (1.Fujitsu Lab.)

Keywords:GaN, Free-standing substrate, InAlN HEMT