[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

[14a-P6-8] Temperature dependence of I-V characteristics for N-polar p-GaN Schottky contacts

〇Toshichika Aoki¹, Tomoyuki Tanikawa², Takashi Matsuoka², Kenji Shiojima¹ (1.Univ. of Fukui, 2.IMR, Tohoku Univ.)

Keywords:p-GaN, N-polar, I-V-T

We conducted temperature dependence of current-voltage measurement for Ni/N-polar p-GaN Schottky contacts. With temperature increasing, Schottky barrier height increased and n value decreased. Tunneling energy from thermionic field emission model of the experimental result is far high to the theoretical value. It is suggested that the Schottky barrier is inhomogeneity. In the under 220 K region, the experimental n value is deviated greatly from the thermal field emission theory. Therefore, it might become n-type conduction. Because of the residual donner concentration is higher than the acceptor concentration.