[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

[14a-P6-7] Characterization of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates (3)
-- Temperature dependence of current-voltage characteristics --

〇Hiroyoshi Imadate¹, Toshichika Aoki¹, Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

Keywords:m-plane n-GaN, I-V-T characteristics

We have fabricated Ni Schottky contacts formed on an m-plane n-GaN surface using crystal cleaving without any surface treatment, and conducted temperature-dependent current-voltage measurement. We found a trend that qf_B increases and the n-value decreases as the temperature increases. These results can be interpreted by the surface patch model, in which the contact consists of a parallel connection of low and high qf_B regions.