[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

[14a-P6-12] Turn-On Capacitance Recovery Characteristics of AlGaN/GaN/GaN:C Hetero-Structures Grown on Si Substrates

〇Yoshitaka Nakano¹, Akihito Chikamatsu¹ (1.Chubu Univ.)

Keywords:AlGaN/GaN hetero-structures, turn-on capacitance recovery characteristics, deep-level defects

We have investigated a detailed correlation between turn-on capacitance recovery characteristics and Carbon-related deep-level defects in AlGaN/GaN/GaN:C hetero-structures grown on Si substrates, employing C-t and steady-state photo-capacitance spectroscopy techniques..