[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

[14a-P6-15] The influence of number of strained-layer super-lattice (SLS) periods in vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor on Si substrates.

〇yuya yamaoka^1,2, ken kakamu², akinori ubukata¹, yoshiki yano¹, toshiya tabuchi¹, koh matsumoto¹, takashi egawa² (1.Taiyo Nippon Sanso, 2.NITech)

Keywords:AlGaN/GaN HEMT, Si substrates, vertical direction breakdown voltage

AlGaN/GaN high-electron mobility transistors (HEMTs) on Si substrate have attracted attention as low-cost, next-generation power devices. We investigated the vertical direction breakdown voltage (VDBV) of HEMTs which total film thickness is constant. As the results, the VDBV is increased by increasing the proportion of thickness of SLS layer with respect to the total film thickness, and the variations of VDBV reduced by reducing the dislocation density of the initial AlN layer.