The 77th JSAP Autumn Meeting, 2016

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Symposium (Oral)

Symposium » Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

Wed. Sep 14, 2016 1:00 PM - 7:00 PM A21 (Main Hall A)

Jun Suda(Kyoto Univ.), Masaaki Kuzuhara(Univ. of Fukui), Kenji Shiraishi(Nagoya Univ.)

1:00 PM - 1:15 PM

[14p-A21-1] Introduction

〇Hiroshi Amano1,2,3,4, Kenji Shiraishi1,2 (1.IMaSS, 2.Nagoya Univ., 3.VBL, 4.ARC)

Keywords:Nitride Semiconductor, Crystal Growth, Defects

Nitride semiconductors are expected to be used in powar devices and high frequency devices, as well as conventional optical devices. In this tlak, we review the recent status of nitride semiconductor and introduce this symposium.