Symposium (Oral)

[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

Wed. Sep 14, 2016 1:00 PM - 7:00 PM A21 (Main Hall A)

Jun Suda(Kyoto Univ.), Masaaki Kuzuhara(Univ. of Fukui), Kenji Shiraishi(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[14p-A21-1] Introduction

〇Hiroshi Amano^1,2,3,4, Kenji Shiraishi^1,2 (1.IMaSS, 2.Nagoya Univ., 3.VBL, 4.ARC)

1:15 PM - 1:45 PM

[14p-A21-2] Prospects of GaN-based Electron Devices

〇Masaaki Kuzuhara¹ (1.Univ. Fukui)

1:45 PM - 2:15 PM

[14p-A21-3] Novel Developments in Bulk GaN Growth

〇Yusuke Mori¹, Masayuki Imanishi¹, Masashi Yoshimura², Mamoru Imade¹ (1.Osaka University, 2.Institute of Laser Eng., Osaka University)

2:15 PM - 2:45 PM

[14p-A21-4] N-polar Growth of Nitride Semiconductors

〇Takashi Matsuoka¹ (1.IMR Tohoku Univ.)

2:45 PM - 3:15 PM

[14p-A21-5] Computer Modeling and Simulation of GaN Vapor Phase Epitaxy: An Ab Initio-Based Approach

〇Yoshihiro Kangawa^1,2, Kenji Shiraishi², Koichi Kakimoto¹ (1.RIAM, Kyushu Univ., 2.IMaSS, Nagoya Univ.)

3:30 PM - 3:45 PM

[14p-A21-6] Demonstration of a free-standing GaN crystal having a diameter of 7-inch with a tiling technique

〇Takehiro Yoshida¹, Masayuki Imanishi², Toshio Kitamura¹, Kenji Otaka¹, Masatomo Shibata¹, Mamoru Imade², Yusuke Mori² (1.SCIOCS, 2.Osaka Univ.)

3:45 PM - 4:00 PM

[14p-A21-7] STEM evaluation of atomic arrangements on dislocation core in GaN layer

〇Tohoru Matsubara^1,2, Kohei Sugimoto¹, Shin Goubara¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University, 2.UBE Scientific Analysis Lab.)

4:00 PM - 4:30 PM

[14p-A21-8] Interface control technologies for GaN transistors

〇Tamotsu Hashizume¹ (1.Hokkaido Univ.)

4:30 PM - 5:00 PM

[14p-A21-9] Current Status and Issues of GaN Vertical Power Devices

〇Jun Suda¹ (1.Kyoto Univ.)

5:00 PM - 5:30 PM

[14p-A21-10] Current Status of GaN RF Devices

〇Naoki Hara¹, Kozo Makiyama¹ (1.Fujitsu Labs.)

5:45 PM - 6:00 PM

[14p-A21-11] [Young Scientist Presentation Award Speech] Development of large-scale optoelectronic integration circuits using GaN-based LED

〇Kazuaki Tsuchiyama¹, Shu Utsunomiya¹, Shota Nakagawa¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara^1,2 (1.Toyohashi Univ. Tech., 2.Electronics-Inspired Interdisciplinary Research Institute (EIIRIS))

6:00 PM - 6:30 PM

[14p-A21-12] An Overview of GaN-based P- and N-channel Power Integrated Circuit Technologies

〇Akira Nakajima¹, Sin-ichi Nishizawa¹, Hiromichi Ohashi¹, Kazuo Tsutsui², Hiroshi Iwai², Kuniyuki Kakushima², Hitoshi Wakabayashi², Vineet Unni³, E. M. S. Narayanan³ (1.AIST, 2.Tokyo Tech. Univ., 3.Sheffield Univ.)

6:30 PM - 7:00 PM

[14p-A21-13] Current Status of GaN-based Optical Devices

〇Yasuhisa Ushida¹ (1.Toyoda Gosei)

Sessions

Symposium » Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-