The 77th JSAP Autumn Meeting, 2016

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Symposium (Oral)

Symposium » Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

Wed. Sep 14, 2016 1:00 PM - 7:00 PM A21 (Main Hall A)

Jun Suda(Kyoto Univ.), Masaaki Kuzuhara(Univ. of Fukui), Kenji Shiraishi(Nagoya Univ.)

2:15 PM - 2:45 PM

[14p-A21-4] N-polar Growth of Nitride Semiconductors

〇Takashi Matsuoka1 (1.IMR Tohoku Univ.)

Keywords:Nitride semiconductor, polarity

It has passed 20 years since blue LEDs consisting of nitride semiconductors have been commercially available. The crystalline quality as the threading dislocation density including laser diodes for H-DVDs is 105~6/cm2 is still poor. This value is by two or three order magnitude higher than that of InGaAsP for optical communications systems. For the electronic device application coming up, the improvement in the crystalline quality has to hurry up. The technology for In-rich InGaAlN also has to be developed. In light of the current situation, the current status and possibility of n-polar growth are introduced.