[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-7] STEM evaluation of atomic arrangements on dislocation core in GaN layer

〇Tohoru Matsubara^1,2, Kohei Sugimoto¹, Shin Goubara¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University, 2.UBE Scientific Analysis Lab.)

Keywords:dislocation core, STEM

We have evaluated the atomic arrangements in threading dislocation cores using cross-sectional and plan-view scanning transmission electron microscopy (STEM). We found a-type dislocation core which has slips relative to the surrounding wurtzite, in addition to the proposed core structures. In this study, the frequency of appearance of such core type on threading dislocations in GaN layer grown by MOVPE and HVPE were evaluated using STEM.