[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-8] Interface control technologies for GaN transistors

〇Tamotsu Hashizume¹ (1.Hokkaido Univ.)

Keywords:GaN, interface

Significant progress in crystal growth of GaN and its related semiconductors enables us to obtain a free-standing GaN substrate and a homo-epitaxial GaN layer on GaN substrate with a relatively low dislocation density. In this connection, excellent electrical properties of Schottky junctions, pn diodes and MIS structures have been reported. Here I discuss Interface control technologies applicable to GaN-based transistors.