[14p-A25-1~21] 15.1 Bulk crystal growth

[14p-A25-5] Effects of Growth Condition of the IR-FZ on the Interface Shape of the Molten Zone

〇Satoshi Watauchi¹, Md. Mukter Hossain¹, Masanori Nagao¹, Isao Tanaka¹ (1.Univ. of Yamanashi)

Keywords:Crystal Growth

The growth diameter by the IR-FZ method should be improved to be used as a manufacturing method. We have demonstrated the diameter of a silicon crystal can be improved up to 45 mm in diameter. To improve the diameter more, the efficiency of the convergent heating should be improved. In this paper, therefore, we investigated the effects of the rotation rate of the grown crystal, the size of the halogen lamps, and the shape of the ellipsoidal mirrors on the required lamp power for the crystal growth and on the shape of the molten zone.