The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[14p-A25-1~21] 15.1 Bulk crystal growth

Wed. Sep 14, 2016 1:15 PM - 7:00 PM A25 (202)

Yuui Yokota(Tohoku Univ.), Hiraku Ogino(AIST)

2:30 PM - 2:45 PM

[14p-A25-5] Effects of Growth Condition of the IR-FZ on the Interface Shape of the Molten Zone

Satoshi Watauchi1, Md. Mukter Hossain1, Masanori Nagao1, Isao Tanaka1 (1.Univ. of Yamanashi)

Keywords:Crystal Growth

The growth diameter by the IR-FZ method should be improved to be used as a manufacturing method. We have demonstrated the diameter of a silicon crystal can be improved up to 45 mm in diameter. To improve the diameter more, the efficiency of the convergent heating should be improved. In this paper, therefore, we investigated the effects of the rotation rate of the grown crystal, the size of the halogen lamps, and the shape of the ellipsoidal mirrors on the required lamp power for the crystal growth and on the shape of the molten zone.