[14p-A33-1~15] Trend of Functional Atomic Thin Film Research-Thin Film Growth-

[14p-A33-7] Heteroepitaxy of Single-Layer MoSe₂ films on GaAs{111}A, B Surfaces

〇Akihiro Ohtake¹, Yoshiki Sakuma¹ (1.NIMS)

Keywords:ransition Metal Dichalcogenide, scanning tunneling microscopy, molecular beam epitaxy

Two-dimensional transition metal dichalcogenides, such as WS₂ and MoSe₂ hare pf great research interest due to their potential application for electronic and optoelectronic devices. In this study, we report on the molecular beam epitaxy of MoSe₂ on GaAs{111}A, B surfaces. RHEED, STM, and XPS are used to study the growth mode of MoSe₂.