Symposium (Oral)

[14p-A33-1~15] Trend of Functional Atomic Thin Film Research-Thin Film Growth-

Wed. Sep 14, 2016 1:15 PM - 6:15 PM A33 (301A)

Atsushi Ando(AIST), Hirokazu Fukidome(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[14p-A33-1] Introduction: Methods for Preparing Atomic Layers of Transition Metal Dichalcogenides

〇Keiji Ueno¹ (1.Saitama Univ.)

1:30 PM - 2:00 PM

[14p-A33-2] CVD growth of 2D atomic layers and its frontiers

〇Hiroki Ago^1,2 (1.Kyushu Univ., 2.PRESTO-JST)

2:00 PM - 2:15 PM

[14p-A33-3] Self-assembly growth of h-BN ribbons by chemical vapor deposition

〇Daiyu Kondo^1,2, Kenjiro Hayashi^1,2, Masako Kataoka¹, Taisuke Iwai¹, Shintaro Sato^1,2 (1.Fujitsu Labs, 2.Fujitsu)

2:15 PM - 2:30 PM

△ [14p-A33-4] Synthesis of Mo_xNb_1-xS₂ thin films by chemical vapor deposition

〇Sho Watanabe¹, Fumiya Uehara², Takashi Yanase³, Taro Nagahama³, Toshihiro Shimada³ (1.Graduate School of Chemical Sciences and Engineering, Hokkaido University, 2.Faculty of Engineering, Hokkaido University, 3.Graduate School of Engineering, Hokkaido University)

2:30 PM - 2:45 PM

[14p-A33-5] Synthesis of MoS₂ thin-film by sulfurization of deposited Mo film on c-plane sapphire

〇Noriyuki Urakami^1,2, Keisuke Kinoshita¹, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Inst. of Carbon Sci. and Tech.)

2:45 PM - 3:00 PM

[14p-A33-6] CVD Growth of TMDC Dependent on Substrate Surface

〇Kenjiro Hayashi¹ (1.Fujitsu Lab.)

3:00 PM - 3:15 PM

[14p-A33-7] Heteroepitaxy of Single-Layer MoSe₂films on GaAs{111}A, B Surfaces

〇Akihiro Ohtake¹, Yoshiki Sakuma¹ (1.NIMS)

3:15 PM - 3:30 PM

[14p-A33-8] MBE grown MoSe₂ films on 2 inch GaAs (111)B wafers

〇Koji Onomitsu¹, Aleksandra Krajewska¹, Ryan Neufeld¹, Fumihiko Maeda¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT BRL)

3:45 PM - 4:15 PM

[14p-A33-9] Growth and characterization of in-plane atomic layer heterojunctions

〇Yasumitsu Miyata¹ (1.Tokyo Metro. Univ.)

4:15 PM - 4:30 PM

[14p-A33-10] Effect of Postdeposition Sulfurization Annealing on Sputtering Deposited MoS₂ film using Organic Sulfur Compound

〇Seiya Ishihara^1,4, Yusuke Hibino¹, Naomi Sawamoto¹, Takumi Ohashi², Kentarou Matsuura², Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Hitoshi Wakabayashi², Atsushi Ogura¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-phase Growth Ltd., 4.JSPS Research Fellow)

4:30 PM - 4:45 PM

△ [14p-A33-11] Fabrication of MoS₂ thin film using (t-C₄H₉)₂S₂ and sulfurization condition dependence on S/Mo ratio

〇SEIYA ISHIHARA^1,4, YUSUKE HIBINO¹, NAOMI SAWAMOTO¹, TAKUMI OHASHI², KENTAROU MATSUURA², HIDEAKI MACHIDA³, MASATO ISHIKAWA³, HIROSHI SUDOH³, HITOSHI WAKABAYASHI², ATSUSHI OGURA¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-phase Growth Ltd., 4.JSPS Research Fellow)

4:45 PM - 5:00 PM

△ [14p-A33-12] Synthesis of MoS₂ and MoSe₂ on Au(111) and the Local Electronic State Analysis

〇Ryosuke Takahashi¹, Ryo Osaka¹, Satoshi Yasuda¹, Kei Murakoshi¹ (1.Hokkaido Univ.)

5:00 PM - 5:15 PM

▼ [14p-A33-13] Carrier transport properties of MoS₂ field-effect transistors produced by multi-step chemical vapor deposition method

〇(DC)Sinae Heo^1,2, Ryoma Hayakawa¹, Yutaka Wakayama^1,2 (1.NIMS, 2.Kyushu Univ.)

5:15 PM - 6:00 PM

[14p-A33-14] Panel Discussion - Current Status and Problems of Thin Film Growth of Chalcogenide Layered Materials -

〇Toshihiro Shimada¹ (1.Hokkaido Univ.)

6:00 PM - 6:15 PM

[14p-A33-15] Coucluding remarks -Current status and prospects: Growth techniques for atomic layers of transision metal diachalgogenides-

〇Shintaro Sato¹ (1.Fujitsu Labs)

Sessions

Symposium » Trend of Functional Atomic Thin Film Research-Thin Film Growth-

[14p-A33-1~15] Trend of Functional Atomic Thin Film Research-Thin Film Growth-

[14p-A33-1] Introduction: Methods for Preparing Atomic Layers of Transition Metal Dichalcogenides

[14p-A33-2] CVD growth of 2D atomic layers and its frontiers

[14p-A33-3] Self-assembly growth of h-BN ribbons by chemical vapor deposition

△ [14p-A33-4] Synthesis of Mo_xNb_1-xS₂ thin films by chemical vapor deposition

[14p-A33-5] Synthesis of MoS₂ thin-film by sulfurization of deposited Mo film on c-plane sapphire

[14p-A33-6] CVD Growth of TMDC Dependent on Substrate Surface

[14p-A33-7] Heteroepitaxy of Single-Layer MoSe₂films on GaAs{111}A, B Surfaces

[14p-A33-8] MBE grown MoSe₂ films on 2 inch GaAs (111)B wafers

[14p-A33-9] Growth and characterization of in-plane atomic layer heterojunctions

[14p-A33-10] Effect of Postdeposition Sulfurization Annealing on Sputtering Deposited MoS₂ film using Organic Sulfur Compound

△ [14p-A33-11] Fabrication of MoS₂ thin film using (t-C₄H₉)₂S₂ and sulfurization condition dependence on S/Mo ratio

△ [14p-A33-12] Synthesis of MoS₂ and MoSe₂ on Au(111) and the Local Electronic State Analysis

▼ [14p-A33-13] Carrier transport properties of MoS₂ field-effect transistors produced by multi-step chemical vapor deposition method

[14p-A33-14] Panel Discussion - Current Status and Problems of Thin Film Growth of Chalcogenide Layered Materials -

[14p-A33-15] Coucluding remarks -Current status and prospects: Growth techniques for atomic layers of transision metal diachalgogenides-

Authentication

Sessions

Symposium » Trend of Functional Atomic Thin Film Research-Thin Film Growth-

[14p-A33-1~15] Trend of Functional Atomic Thin Film Research-Thin Film Growth-

△ [14p-A33-4] Synthesis of MoxNb1-xS2 thin films by chemical vapor deposition

△ [14p-A33-11] Fabrication of MoS2 thin film using (t-C4H9)2S2 and sulfurization condition dependence on S/Mo ratio

△ [14p-A33-12] Synthesis of MoS2 and MoSe2 on Au(111) and the Local Electronic State Analysis

▼ [14p-A33-13] Carrier transport properties of MoS2 field-effect transistors produced by multi-step chemical vapor deposition method

Authentication

△ [14p-A33-4] Synthesis of Mo_xNb_1-xS₂ thin films by chemical vapor deposition

△ [14p-A33-11] Fabrication of MoS₂ thin film using (t-C₄H₉)₂S₂ and sulfurization condition dependence on S/Mo ratio

△ [14p-A33-12] Synthesis of MoS₂ and MoSe₂ on Au(111) and the Local Electronic State Analysis

▼ [14p-A33-13] Carrier transport properties of MoS₂ field-effect transistors produced by multi-step chemical vapor deposition method