[14p-A35-1~12] 13.9 Optical properties and light-emitting devices

△ [14p-A35-3] High photostability of fluorescent InP/ZnS quantum dots embedded in TMAS-derived silica

〇(M1)Taichi Watanabe¹, Chikako Wada¹, Yoshiki Iso¹, Tetsuhiko Isobe¹, Hirokazu Sasaki² (1.Keio Univ., 2.SHOEI CHEMICAL INC.)

Keywords:quantum dot, hydrophilization, photostability

InP/ZnS core/shell quantum dot (QD) is suited to application to white LEDs, but the photoluminescence intensity decreases under continuous photo-excitation. This QD degradation is attributed to photo-oxidation, so it is needed to avoid contact between QD and air. In this study, we embedded InP/ZnS core/shell QD into tetramethylammonium silicate (TMAS)-derived silica monolith to improve its photostability. Hydrophilization of InP/ZnS QD was needed for embedding them into silica. Therefore, we exchange the capping ligand of QD from 1-dodecanethiol to 3-mercaptopropionic acid.