[14p-B7-1~17] Crystallization of IV element Semiconductor thin-film and Deffects control

[14p-B7-10] Effects of defects in crystalline Ge substrates on FET performance

〇Akira Toriumi¹, Tomonori Nishimura¹ (1.Univ. Tokyo)

Keywords:germanium, defects

We have worked for high performance Ge FETs, and we found that Ge substrate had big effects on FET performance. Although it may sound quite natural, it is not true. Electron mobility was significantly different just by changing the substrate in spite of the fact that gate stack characteristics were exactly the same by employing the same fabrication process. We have investigated the origin for this difference. So, in this talk, we would like to discus about such strange characteristics of Ge in terms of defects in Ge substrate.