[14p-B7-1~17] Crystallization of IV element Semiconductor thin-film and Deffects control

[14p-B7-11] Defects and Diffusion in IV Semiconductors

〇Masashi Uematsu¹ (1.Keio Univ., Graduate School of S&T, TCAD R&D Center)

Keywords:diffusion, point defects

With the scaledown of CMOS devices, it is crucial to establish a diffusion model to accurately predict impurity diffusion in semiconductors. In addition, impurity diffusion not only in Si but also in various base materials, such as, Ge, SiGe, and SiC, should be extensively studied with recent progresses in semiconductor devices. The current status of impurity diffusion modeling in these semiconductors is reviewed in this talk.