[14p-B7-1~17] Crystallization of IV element Semiconductor thin-film and Deffects control

[14p-B7-12] Doping technique for IV-group semiconductor using interfacial nanostructures

〇Kazushi Miki^1,2, Koichi Murata^1,2, Christopher Kirkham^2,3,4, Bowler David^3,4 (1.NIMS, 2.Univ. of Tsukuba, 3.LCN, 4.UCL)

Keywords:delta doping, anneal, silicon

We report the brad new delta doping technique with using interfacial nanostructures. Especially delta doping technique has been developed on the basis of crystal growth technique, and balance of doping amount, crystalization, defect supression is the most important. In this presenttaion, towards realization of new functional device, we would report of two cases of Bi and Mn delta doping into Si crystal, with electronic properties, photoluminescence measurement and XAFS measurements data.