The 77th JSAP Autumn Meeting, 2016

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Symposium (Oral)

Symposium » Crystallization of IV element Semiconductor thin-film and Deffects control

[14p-B7-1~17] Crystallization of IV element Semiconductor thin-film and Deffects control

Wed. Sep 14, 2016 12:30 PM - 7:15 PM B7 (Exhibition Hall)

Naoto Matsuo(Univ. of Hyogo), Seiichiro Higashi(Hiroshima Univ.), Noritaka Usami(Nagoya Univ.), Ichiro Yonenaga(Tohoku Univ.)

1:45 PM - 2:15 PM

[14p-B7-4] Control of Crystal Growth and Defects in Group IV Semiconductor Thin Films by Atmospheric Pressure Thermal Plasma Jet

〇Higashi Seiichiro1 (1.Hiroshima Univ.)

Keywords:thin film transistor, atomospheric pressure plasma, crystallization

High speed scanning of molten region formed by atmospheric pressure thermal plasma jet into amorphous silicon strips realizes local single crystal formation. By avoiding excess heating of molten silicon, surface roughening and defect formation in crystallized silicon strips are suppressed and high performance thin film transistors with average mobility of 503 cm2V-1s-1 and threshold voltage of 1.7 V are successfully fabricated.