[14p-C41-1~21] 10.4 Semiconductors, organic, optical, and quantum spintronics

△ [14p-C41-12] Hole spin relaxation in type-I tunneling biquantum well

〇Ko Nakayama¹, Canyu Jiang¹, Yoshiki Nakamura¹, Masayuki Iida¹, Shima Tanigawa¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ.)

Keywords:spin relaxation, tunneling biquantum well, hole

In GaAs/AlGaAs type-I tunneling biquantum wells, the recovery time of excitonic absorption bleaching is reduced compared with conventional GaAs/AlGaAs multiple quantum wells because the excited electrons in GaAs narrow wells can tunnel to the GaAs wide quantum wells. We observed positive barrier thickness dependences of electron tunneling time and hole spin relaxation time. This result suggests that hole spin relaxation is affected by electron tunneling.