[14p-C41-1~21] 10.4 Semiconductors, organic, optical, and quantum spintronics

▼ [14p-C41-13] Period & well width dependences of spin relaxation time of GaAs/GaAsP strain-compensated superlattice as highly spin-polarized electron source

〇shunsuke ohki¹, Xiuguang Jin², Tomoki Ishikawa¹, Takuya Kamezaki¹, Kizuku Yamada¹, Atsushi Tackeuchi¹ (1.Waseda Univ., 2.KEK)

Keywords:electron source, spin relaxation, GaAs/GaAsP

In this research, we investigated the spin relaxation in two GaAs/GaAsP strain-compensated SL samples. One sample is composed of 90-period-SL layers whose well widths, L_w, are 4 nm and the other is composed of 8-period-SL layers of L_w = 6.3 nm. The spin relaxation times of both samples at room temperature are unchanged compared with 24-period-SL sample of L_w = 4 nm which we reported before. However, the spin relaxation times of both samples at 10 K increase more than 70 ps compared with 24-period-SL sample. I think this research leads to elucidation of suitable structure for spin polarized electron source.