2016年 第77回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.4 半導体・有機・光・量子スピントロニクス

[14p-C41-1~21] 10.4 半導体・有機・光・量子スピントロニクス

2016年9月14日(水) 13:15 〜 19:00 C41 (日航4階朱雀A)

大矢 忍(東大)、清水 大雅(農工大)

16:45 〜 17:00

[14p-C41-13] Period & well width dependences of spin relaxation time of GaAs/GaAsP strain-compensated superlattice as highly spin-polarized electron source

shunsuke ohki1、Xiuguang Jin2、Tomoki Ishikawa1、Takuya Kamezaki1、Kizuku Yamada1、Atsushi Tackeuchi1 (1.Waseda Univ.、2.KEK)

キーワード:electron source, spin relaxation, GaAs/GaAsP

In this research, we investigated the spin relaxation in two GaAs/GaAsP strain-compensated SL samples. One sample is composed of 90-period-SL layers whose well widths, Lw, are 4 nm and the other is composed of 8-period-SL layers of Lw = 6.3 nm. The spin relaxation times of both samples at room temperature are unchanged compared with 24-period-SL sample of Lw = 4 nm which we reported before. However, the spin relaxation times of both samples at 10 K increase more than 70 ps compared with 24-period-SL sample. I think this research leads to elucidation of suitable structure for spin polarized electron source.