[14p-P10-1~25] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[14p-P10-19] Room-temperature atomic layer deposition of SnO₂ by using plasma-excited humidified argon

〇kentaro Tokoro¹, Syunsuke Saito¹, Kensaku Kanomata¹, Masanori Miura¹, Bashir Ahmmad¹, Shigeru Kubota¹, Fumihiko Hirose¹ (1.Yamagata Univ.)

Keywords:Tin oxide, atomic layer deposition, plasma-excited humidified argon

Tin oxide (SnO₂) is an oxide semiconductor material with an excellent optical transparency for transparent conducting films. It is also used as a channel material for gas sensors. A room temperature atomic layer deposition of SnO₂ is developed with a precursor of tetra methyl tin (Sn(CH₃)_4, TMT) and plasma excited humidified Ar for flexible electronics. We confirm the growth per cycle of 0.02 nm /cycle by spectroscopic ellipsometry. XPS indicated that the deposited SnO₂ is in the fully oxidized state. The saturated reaction of the precursor adsorption and its oxidization was confirmed by IR absorbance spectroscopy.