[14p-P10-1~25] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[14p-P10-21] The Study on Improvement of Hysteresis characteristics of InZnO Thin-Film Transistors

〇(M2)Yuki Omizo¹, Shotaro Shinya¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. Tech.)

Keywords:ZnO, Thin Film Transistor