[14p-P10-1~25] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[14p-P10-8] Low Pressure MOCVD Growth of β−Ga₂O₃ Using Ga-Acethyacetonate

〇Takashi Yasuda¹, Takashi Togashi¹, Shinji Nakagomi¹, Yoshihiro Kokubun¹ (1.Ishinomaki Senshu Univ.)

Keywords:Gallium Oxide (Ga2O3), Metal Organic Chemical Vapor Deposition (MOCVD), Thin Films

Low pressure MOCVD growth of β−Ga₂O₃ using Ga-Acetylacetonate will be presented.