[14p-P20-1~4] 13.7 Nano structures and quantum phenomena

[14p-P20-1] Analysis of optics properties and carrier transport in biased GaAs/AlAs asymmetric-multiple-quantum-well

〇Kousuke Yoshida¹, Rui Wang¹, Makoto Hosoda², Kouichi Akahane³, Naoki Ohtani¹ (1.Doshisha Univ., 2.Shizuoka Univ., 3.NICT)

Keywords:GaAs/AlAs quantum-well

Various optics characteristics are confirmed by carrier dispersion between the Γ level in the GaAs quantum well layer and the X level in the AlAs barrier layer in GaAs/AlAs multiple-quantum-well structure applied an electric field.In the GaAs/AlAs asymmetry multiple-quantum-well to use in this study, the barrier layer is very thin.Therefore, various carrier transportation phenomena by the strong combination of the wave function between the quantum well occur,and the complicated optics properties that Γ-X dispersion participates in are expected.