Oral presentation

[15p-A26-1~8] 13.7 Nano structures and quantum phenomena

Thu. Sep 15, 2016 3:45 PM - 5:45 PM A26 (203-204)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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3:45 PM - 4:00 PM

[15p-A26-1] Computational designs of quantum dot superlattice characterized by hyper-nano space

〇HyeonDeuk Kim^1,2 (1.Kyoto Univ., 2.PRESTO)

4:00 PM - 4:15 PM

[15p-A26-2] Suppression of an optical state-filling effect in high-density self-assembled quantum dots of InGaAs

〇Masayuki Urabe¹, Kazuki Takeishi¹, Kodai Itabashi¹, Junichi Takayama¹, Akihiro Murayama¹ (1.Hokkaido Univ.)

4:15 PM - 4:30 PM

[15p-A26-3] Effects of growth temperature of barrier layers integrated with InGaAs quantum dots on spin-transport properties

〇Kodai Itabashi¹, Kazuki Takeishi¹, Masayuki Urabe¹, Junichi Takayama¹, Shula Chen², Akihiro Murayama¹ (1.Hokkaido Univ., 2.Linkoping Univ.)

4:30 PM - 4:45 PM

[15p-A26-4] Exciton-spin injection from InGaAs quantum wells to quantum dots and spin relaxation after the injection

〇Kazuki Takeishi¹, Shula Chen², Junichi Takayama¹, Kodai Itabashi¹, Masayuki Urabe¹, Akihiro Murayama¹ (1.Hokkaido Univ., 2.Linkoping Univ.)

4:45 PM - 5:00 PM

[15p-A26-5] Contribution of Si doping for workfunction of InAs quantum dots

〇(M2)Tomohiro Kobayashi¹, Ko Takabayashi¹, Kenichi Shimomura¹, Yuwei Zhang¹, Fumihiko Yamada¹, Itaru Kamiya¹ (1.Toyota Tech. Inst)

5:00 PM - 5:15 PM

▲ [15p-A26-6] Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature

〇Daniel Ioan Moraru¹, Arup Samanta¹, Tarik Hasan¹, Manoharan Muruganathan², Hiroshi Mizuta^2,3, Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.JAIST, 3.Univ. Southampton)

5:15 PM - 5:30 PM

[15p-A26-7] Electron tunneling through single self-assembled InSb quantum dots probed by nanogap electrodes

〇Kenji Shibata¹, Masato Ohmori², Hiroyuki Sakaki², Kazuhiko Hirakawa³ (1.Tohoku Inst. Tech., 2.Toyota Tech. Inst., 3.IIS and INQIE, Univ. of Tokyo)

5:30 PM - 5:45 PM

[15p-A26-8] Electrical conduction of InAs quantum dot grown on InP(311)B substrate

〇Naoki Wada¹, Ya Zhang¹, Kenji Yoshida¹, Kouichi Akahane², Kazuhiko Hirakawa^1,3 (1.IIS, 2.NICT, 3.INQIE)

Oral presentation

[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

Fri. Sep 16, 2016 10:00 AM - 11:45 AM A26 (203-204)

Hajime Okamoto(NTT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

▲ [16a-A26-1] Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes

〇Daniel Ioan Moraru¹, Mitsuki Shibuya¹, Ratno Nuryadi², Masahiro Hori¹, Yukinori Ono¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.AAAT, Indonesia)

10:15 AM - 10:30 AM

▲ [16a-A26-2] Strain relaxation in submonolayer InAs/GaAs quantum structures

〇Yuwei Zhang¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

10:30 AM - 10:45 AM

△ [16a-A26-3] Spin relaxation in Si doped In_0.8Ga_0.2As/Al_0.5Ga_0.5As/AlAs_0.56Sb_0.44 coupled double quantum wells

〇tomoki ishikawa¹, Shin-ichiro Gozu², Teruo Mozume², Shunsuke Ohki¹, Kizuku Yamada¹, Takuya Kamezaki¹, Atsushi Tackeuchi¹ (1.Waseda Univ., 2.AIST)

10:45 AM - 11:00 AM

△ [16a-A26-4] The observation of the spin relaxation in InGaAs quantum well and GaInNAs quantum well

〇Takuya Kamezaki¹, Tomoki Ishikawa¹, Shunsuke Ohki¹, Kizuku Yamada¹, Shulong Lu², Lifeng Bian², Zhichuan Niu³, Astushi Tackeuchi¹ (1.Waseda Univ., 2.SINANO-CAS, 3.I.S.-CAS)

11:00 AM - 11:15 AM

△ [16a-A26-5] Spin relaxation mechanism of GaAs/AlGaAs resonant tunneling bi-quantum-well

〇Yoshiki Nakamura¹, Canyu Jiang¹, Ko Nakayama¹, Masayuki Iida¹, Shima Tanigawa¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ)

11:15 AM - 11:30 AM

[16a-A26-6] Investigation of spin dynamics based on initial phase shift of spin precession

Liping Yan², Tetsuyoshi Takamure¹, Reina Kaji¹, 〇Satoru Adachi¹ (1.Hokkaido Univ., 2.Taiyuan Univ. Tech.)

11:30 AM - 11:45 AM

[16a-A26-7] Excitation energy dependence of initial phase shift of resident electron spin polarization precession

〇(M1)Tetsuyoshi Takamure¹, Yan Liping², Kaji Reina¹, Adachi Satoru¹ (1.Hokkaido Univ., 2.Taiyuan Univ. of Technology)

Poster presentation

[14p-P20-1~4] 13.7 Nano structures and quantum phenomena

Wed. Sep 14, 2016 4:00 PM - 6:00 PM P20 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[14p-P20-1] Analysis of optics properties and carrier transport in biased GaAs/AlAs asymmetric-multiple-quantum-well

〇Kousuke Yoshida¹, Rui Wang¹, Makoto Hosoda², Kouichi Akahane³, Naoki Ohtani¹ (1.Doshisha Univ., 2.Shizuoka Univ., 3.NICT)

4:00 PM - 6:00 PM

[14p-P20-2] Resistance switching characteristics of Si/CaF₂ resonant-tunneling ruantum-well structures

〇Fumihiro Sakurai¹, Masahiro Watanabe¹ (1.Tokyo Tech)

4:00 PM - 6:00 PM

[14p-P20-3] The effect of electroluminescence of GaAs Quantum Nanodisk LED by Combination of Bio-template and Neutral Beam Etching

〇Akio Higo¹, Takayuki Kiba², Cedric Thomas³, Junichi Takayama⁴, Hassanet Sodabanlu⁵, Naofumi Okamoto⁶, Ichiro Yamashita⁶, Masakazu Sugiyama⁵, Yoshiaki Nakano⁵, Akihiro Murayama⁴, Seiji Samukawa^1,3 (1.WPI-AIMR, Tohoku Univ., 2.Kitami Institute of Tech., 3.IFS, Tohoku Univ., 4.IST, Hokkaido Univ., 5.Sch.of Eng., the Univ. of Tokyo, 6.NAIST)

4:00 PM - 6:00 PM

[14p-P20-4] Quantum size effect of ZnSe-nanoparticles in the dielectric function spectra

〇Takuya Murakami¹, DaeGwi Kim², Kazuki Wakita³, YongGu Shim¹ (1.Osaka Pref. Univ., 2.Osaka City Univ., 3.Chiba Inst. Tech.)

Sessions

13 Semiconductors » 13.7 Nano structures and quantum phenomena

[15p-A26-1~8] 13.7 Nano structures and quantum phenomena

[15p-A26-1] Computational designs of quantum dot superlattice characterized by hyper-nano space

[15p-A26-2] Suppression of an optical state-filling effect in high-density self-assembled quantum dots of InGaAs

[15p-A26-3] Effects of growth temperature of barrier layers integrated with InGaAs quantum dots on spin-transport properties

[15p-A26-4] Exciton-spin injection from InGaAs quantum wells to quantum dots and spin relaxation after the injection

[15p-A26-5] Contribution of Si doping for workfunction of InAs quantum dots

▲ [15p-A26-6] Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature

[15p-A26-7] Electron tunneling through single self-assembled InSb quantum dots probed by nanogap electrodes

[15p-A26-8] Electrical conduction of InAs quantum dot grown on InP(311)B substrate

[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

▲ [16a-A26-1] Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes

▲ [16a-A26-2] Strain relaxation in submonolayer InAs/GaAs quantum structures

△ [16a-A26-3] Spin relaxation in Si doped In_0.8Ga_0.2As/Al_0.5Ga_0.5As/AlAs_0.56Sb_0.44 coupled double quantum wells

△ [16a-A26-4] The observation of the spin relaxation in InGaAs quantum well and GaInNAs quantum well

△ [16a-A26-5] Spin relaxation mechanism of GaAs/AlGaAs resonant tunneling bi-quantum-well

[16a-A26-6] Investigation of spin dynamics based on initial phase shift of spin precession

[16a-A26-7] Excitation energy dependence of initial phase shift of resident electron spin polarization precession

[14p-P20-1~4] 13.7 Nano structures and quantum phenomena

[14p-P20-1] Analysis of optics properties and carrier transport in biased GaAs/AlAs asymmetric-multiple-quantum-well

[14p-P20-2] Resistance switching characteristics of Si/CaF₂ resonant-tunneling ruantum-well structures

[14p-P20-3] The effect of electroluminescence of GaAs Quantum Nanodisk LED by Combination of Bio-template and Neutral Beam Etching

[14p-P20-4] Quantum size effect of ZnSe-nanoparticles in the dielectric function spectra

Authentication

Sessions

13 Semiconductors » 13.7 Nano structures and quantum phenomena

[15p-A26-1~8] 13.7 Nano structures and quantum phenomena

▲ [15p-A26-6] Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature

[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

▲ [16a-A26-1] Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes

▲ [16a-A26-2] Strain relaxation in submonolayer InAs/GaAs quantum structures

△ [16a-A26-3] Spin relaxation in Si doped In0.8Ga0.2As/Al0.5Ga0.5As/AlAs0.56Sb0.44 coupled double quantum wells

△ [16a-A26-4] The observation of the spin relaxation in InGaAs quantum well and GaInNAs quantum well

△ [16a-A26-5] Spin relaxation mechanism of GaAs/AlGaAs resonant tunneling bi-quantum-well

[14p-P20-1~4] 13.7 Nano structures and quantum phenomena

Authentication

△ [16a-A26-3] Spin relaxation in Si doped In_0.8Ga_0.2As/Al_0.5Ga_0.5As/AlAs_0.56Sb_0.44 coupled double quantum wells