[15p-A26-1~8] 13.7 Nano structures and quantum phenomena

[15p-A26-5] Contribution of Si doping for workfunction of InAs quantum dots

〇(M2)Tomohiro Kobayashi¹, Ko Takabayashi¹, Kenichi Shimomura¹, Yuwei Zhang¹, Fumihiko Yamada¹, Itaru Kamiya¹ (1.Toyota Tech. Inst)

Keywords:quantum dots, workfunction, strain

InAs quantum dots (QDs) on GaAs(001) exhibit unique I-V characteristics, which varies with size. We have reported that when the size reaches the order of 100 nm, their I-V characteristics turns ohmic, allowing them to be used as nanoelectrodes. One possibility for explaining this change is dip in the workfunction (WF), which arise at the peripheral of the QDs. We also have reported that the dip formation and WF change are related on strain inside QDs, and WF change might be contributed by surface dipole originated from strain. In this study, WF of Si-doped InAs QDs were discussed to reveal surface dipole contribution.