The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.7 Nano structures and quantum phenomena

[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

Fri. Sep 16, 2016 10:00 AM - 11:45 AM A26 (203-204)

Hajime Okamoto(NTT)

11:30 AM - 11:45 AM

[16a-A26-7] Excitation energy dependence of initial phase shift of resident electron spin polarization precession

〇(M1)Tetsuyoshi Takamure1, Yan Liping2, Kaji Reina1, Adachi Satoru1 (1.Hokkaido Univ., 2.Taiyuan Univ. of Technology)

Keywords:resident electron spin polarization, II-VI compound semiconductor, quantum well

Charged excitons in semiconductor nanostructures leaves electrons or holes in the confinement region. Since the spin lifetime of the remained electrons (or holes) is not limited by their recombination, the efficient generation of the highly polarized resident electron spins is very useful for the various spin-based applications. Therefore, the detailed knowledge for the dynamics of the resident electron spin polarization (RESP) is very important. Here, we have measured the RESP precession directly by using the time-resolved Kerr rotation technique, and investigate the dynamics based on the initial phase of the RESP precession. The detailed dynamical process via the excitation energy dependence will be given in the conference.