[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

△ [16a-A26-4] The observation of the spin relaxation in InGaAs quantum well and GaInNAs quantum well

〇Takuya Kamezaki¹, Tomoki Ishikawa¹, Shunsuke Ohki¹, Kizuku Yamada¹, Shulong Lu², Lifeng Bian², Zhichuan Niu³, Astushi Tackeuchi¹ (1.Waseda Univ., 2.SINANO-CAS, 3.I.S.-CAS)

Keywords:spin, GaInNAs

GaInNAs QW semiconductor alloys grown on a GaAs substrate have attracted a lot of attention due to their unusual physical properties and potential applications in long wavelength optoelectronic devices. we report the spin relaxation time of Ga_0.6In_0.4N_0.01As_0.99 QW and In_0.4Ga_0.6As QW measured by the time-resolved spin-dependent pump and probe reflectance measurements.