The 77th JSAP Autumn Meeting, 2016

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13 Semiconductors » 13.7 Nano structures and quantum phenomena

[15p-A26-1~8] 13.7 Nano structures and quantum phenomena

Thu. Sep 15, 2016 3:45 PM - 5:45 PM A26 (203-204)

Toshiyuki Miyazawa(Univ. of Tokyo)

5:30 PM - 5:45 PM

[15p-A26-8] Electrical conduction of InAs quantum dot grown on InP(311)B substrate

〇Naoki Wada1, Ya Zhang1, Kenji Yoshida1, Kouichi Akahane2, Kazuhiko Hirakawa1,3 (1.IIS, 2.NICT, 3.INQIE)

Keywords:Quantum dot, Single electron transistor

Self-assembled InAs quantum dots(QDs) grown on GaAs substrates have been intensively studied. However, during the growth, intermixing of In and Ga atoms occurs and QD shows low conductance. To avoid this problem, we grew InAs QDs on InP(311)B substrate and evaluated its electrical conduction characteristics as a single electron transistor.