[16a-A26-1~7] 13.7 Nano structures and quantum phenomena

▲ [16a-A26-2] Strain relaxation in submonolayer InAs/GaAs quantum structures

〇Yuwei Zhang¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

Keywords:MBE, submonolayer quantum well

Up-converted photoluminescence (UPL) in semiconductor quantum dots (QDs) and quantum wells (QWs) has attracted much attention in recent years for applications such as intermediate band solar cells. Recently, we reported the importance of confined states for improving the efficiency which can be formed by monolayer thick InAs QWs. However, the lattice mismatch between InAs and GaAs limits the stacking numbers of QDs and QWs, and further the UPL efficiency. In this paper, we study the effect of strain relaxation on the optical properties of InAs/GaAs MQW structures submonolayer (SML) InAs layers.