[14p-P5-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[14p-P5-1] A Mechanical Noise Analysis Method for CMOS-MEMS Inertial Sensor

〇Toshifumi Konishi¹, Daisuke Yamane^2,4, Hiroyuki Ito^2,4, Shiro Dosho^2,4, Noboru Ishihara^2,4, Hiroshi Toshiyoshi^3,4, Kazuya Masu^2,4, Katsuyuki Machida^1,4 (1.NTT-AT, 2.Tokyo Tech., 3.Univ. of Tokyo, 4.JST-CREST)

Keywords:CMOS-MEMS, mechanical noise, multi-physics simulation

This paper describes a mechanical noise analysis method for a capacitive CMOS-MEMS inertial sensor. We propose a mechanical noise model to calculate with a multi-physics simulation on a conventional circuit design environment. Proposed model is embedded into circuit module. Transient and AC noise characteristics of MEMS inertial sensor are analyzed with the proposed model.